Pdf obrazec za 2SC3600C Rezultati iskanja
-
Del št: 2SC3600C
Proizvajalec:
Temperatura:
Opis:
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126PDF Velikost: Kb PDF Strani: Page
DatasheetPDF je odkril 1 PDF dokumentov, ki ustrezajo vaši poizvedbi:
Podobni del ni
- 2SC3600 Sanyo Semicon Device
high-Definition Display Video Output Applications - 2SC3600C
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600D
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600E
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600F
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3601 Sanyo
PNP/NPN Epitaxial Planar Silicon Transistors - 2SC3601C
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601D
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601E
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601F
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3602
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | MICRO-X - 2SC3603 NEC[NEC]
EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION - 2SC3604 NEC[NEC]
EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION - 2SC3605 Toshiba
VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS - 2SC3606
EPITAXIAL PLANAR TYPE (VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS)
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam