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Parte No: 2SC537607
Fabricante:
Toshiba SemiconductorTemperatura:
Descripción:
Silicon Epitaxial Type Audio Frequency General Purpose Amplifier ApplicationsPDF Tamaño: Kb PDF Páginas: Page
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2SC537607 PDF
Relacionado parte no
- 2SC537
TRANSISTOR | BJT | NPN | 100MA I(C) | TO-106VAR - 2SC5370 Sanken electric
SILICON EPITAXIAL PLANAR TRANSISTOR(EMERGENCY LIGHTING INVERTER GENERAL PURPOSE) - 2SC5374
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EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER MUTING SWITCHING APPLICATIONS) - 2SC537607 Toshiba Semiconductor
Silicon Epitaxial Type Audio Frequency General Purpose Amplifier Applications - 2SC5376A
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 400MA I(C) | SOT-416 - 2SC5376B
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 400MA I(C) | SOT-416 - 2SC5376F TOSHIBA
Transistor Silicon Epitaxial Type Audio Frequency General Purpose Amplifier Applications Muting Switching Applications - 2SC5376F07 Toshiba Semiconductor
Silicon Epitaxial Type Audio Frequency General Purpose Amplifier Applications - 2SC5376FA
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 400MA I(C) | SOT-416VAR - 2SC5376FB
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 400MA I(C) | SOT-416VAR - 2SC5376F_07 Toshiba Semiconductor
Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications
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