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• Parte No: 3EZ6.2

  Fabricante:
  DIOTEC[Diotec Semiconductor]

  Temperatura:
  

  Descripción:
  Silicon-Power-Z-Diodes (non-planar technology)

  PDF Tamaño: Kb PDF Páginas: Page

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Relacionado parte no

• 3EZ6.2 DIOTEC[Diotec Semiconductor]
  Silicon-Power-Z-Diodes (non-planar technology)
• 3EZ6.2D JGD
  3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, -20% tolerance.
• 3EZ6.2D1 JGD
  3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, -1% tolerance.
• 3EZ6.2D10 EIC[EIC discrete Semiconductors]
  SILICON ZENER DIODES
• 3EZ6.2D2 JGD
  3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, -2% tolerance.
• 3EZ6.2D3 JGD
  3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, -3% tolerance.
• 3EZ6.2D4 JGD
  3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, -4% tolerance.
• 3EZ6.2D5 discrete Semiconductors
  SILICON ZENER DIODES
• 3EZ6.2D5RLG Semiconductor
  Watt DO-41 Surmetic?? Zener Voltage Regulators
• 3EZ6.8 International Inc.
  GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
• 3EZ6.8D JGD
  3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, -20% tolerance.
• 3EZ6.8D10 EIC[EIC discrete Semiconductors]
  SILICON ZENER DIODES
• 3EZ6.8D2 JGD
  3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, -2% tolerance.
• 3EZ6.8D3 JGD
  3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, -3% tolerance.
• 3EZ6.8D4 JGD
  3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, -4% tolerance.

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