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Parte No: BF961B
Fabricante:
Vishay SiliconixTemperatura:
Descripción:
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion ModePDF Tamaño: Kb PDF Páginas: Page
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BF961B PDF
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N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE - BF961 Vishay
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TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF964SB
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N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF966SA
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF966SB
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF967 Siemens Semiconductor Group
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