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Parte No: K4E160811D
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SAMSUNG[Samsung semiconductor]Temperatura:
Descripción:
8Bit CMOS Dynamic with Extended DataPDF Tamaño: Kb PDF Páginas: Page
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Relacionado parte no
- K4E160811D SAMSUNG[Samsung semiconductor]
8Bit CMOS Dynamic with Extended Data - K4E160811D-B Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160811D-F Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160812D Samsung semiconductor
8Bit CMOS Dynamic with Extended Data - K4E160812D-B Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. - K4E160812D-F Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
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