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• Parte No: K4E170812D-F

  Fabricante:
  Samsung

  Temperatura:
  

  Descripción:
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

  PDF Tamaño: Kb PDF Páginas: Page

  Comprar K4E170812D-F

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Relacionado parte no

• K4E170811D Samsung semiconductor
  8Bit CMOS Dynamic with Extended Data
• K4E170811D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
• K4E170811D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
• K4E170812D Samsung semiconductor
  8Bit CMOS Dynamic with Extended Data
• K4E170812D-B Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
• K4E170812D-F Samsung
  2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

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