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• Parte No: MM118-06

  Fabricante:
  MICROSEMI[Microsemi Corporation]

  Temperatura:
  

  Descripción:
  PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

  PDF Tamaño: Kb PDF Páginas: Page

  Comprar MM118-06

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Relacionado parte no

• MM118-06 MICROSEMI[Microsemi Corporation]
  PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
• MM118-06F Microsemi Corporation
  PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
• MM118-06L Microsemi Corporation
  PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
• MM118-12 Microsemi Corporation
  PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
• MM118-XX Microsemi Corporation
  PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
• MM1180 MITSUMI[MITSUMI ELECTRIC]
  Low-Noise Low-Satulation Three-Pin Regulator
• MM1180CM Mitsumi
  Low-noise, low-saturation three-pin regulator
• MM1180CT Mitsumi
  Low-noise, low-saturation three-pin regulator
• MM1180GM Mitsumi
  Low-noise, low-saturation three-pin regulator
• MM1180GT Mitsumi
  Low-noise, low-saturation three-pin regulator
• MM1180HM Mitsumi
  Low-noise, low-saturation three-pin regulator
• MM1180HT Mitsumi
  Low-noise, low-saturation three-pin regulator
• MM1180IT Mitsumi
  Low-noise, low-saturation three-pin regulator
• MM1180JM Mitsumi
  Low-noise, low-saturation three-pin regulator
• MM1180JT Mitsumi
  Low-noise, low-saturation three-pin regulator

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