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  • Del nr: IRG4BC29F

    Tillverkare:
    International Rectifier

    Temperatur:

    Beskrivning:
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

    PDF Storlek: Kb PDF: Page

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Liknande Del nr

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    Short Circuit Rated UltraFast IGBT
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    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
  • IRG4BC10KDPBF International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • IRG4BC10S International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
  • IRG4BC10SD International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • IRG4BC10SD-L International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
  • IRG4BC10SD-LPBF International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • IRG4BC10SD-S International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
  • IRG4BC10SD-SPBF International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • IRG4BC10SD-STRL
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
  • IRG4BC10SD-STRR
    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
  • IRG4BC10SDPBF
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • IRG4BC10SPBF International
    INSULATED GATE BIPOLAR TRANSISTOR
  • IRG4BC10UD International Rectifier
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
  • IRG4BC10UDPBF International Rectifier
    INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast CoPack IGBT

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