Datablad PDF För IRG4RC10STR Sökresultat

• Del nr: IRG4RC10STR

  Tillverkare:
  

  Temperatur:
  

  Beskrivning:
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA

  PDF Storlek: Kb PDF: Page

  Köpa IRG4RC10STR

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Liknande Del nr

• IRG4RC10 International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
• IRG4RC10K
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
• IRG4RC10KD IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
• IRG4RC10KDPBF International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
• IRG4RC10KDTR International Rectifier
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA
• IRG4RC10KDTRL International Rectifier
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA
• IRG4RC10KDTRR International Rectifier
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA
• IRG4RC10KPBF International
  INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
• IRG4RC10S International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)
• IRG4RC10SD IRF[International Rectifier]
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
• IRG4RC10STR
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA
• IRG4RC10STRL
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA
• IRG4RC10STRR
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA
• IRG4RC10U
  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
• IRG4RC10UD International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)

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