Datablad PDF För K4R881869M-NBCCG6 Sökresultat

• Del nr: K4R881869M-NBCCG6

  Tillverkare:
  SAMSUNG[Samsung semiconductor]

  Temperatur:
  

  Beskrivning:
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM

  PDF Storlek: Kb PDF: Page

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K4R881869M-NBCCG6 PDF

Liknande Del nr

• K4R881869M-NBCCG6 SAMSUNG[Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM
• K4R881869M-NCG6 Samsung
  512K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.
• K4R881869M-NCK7 SAMSUNG[Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM
• K4R881869M-NCK8 SAMSUNG[Samsung semiconductor]
  288Mbit RDRAM 512K Dependent Banks Direct RDRAMTM

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