Специфікацію PDF для BCR30AM8 результати пошуку

• Частина Ні: BCR30AM8

  Виробник:
  

  Температура:
  

  Опис:
  TRIAC|400V V(DRM)|30A I(T)RMS|TO-247

  PDF Розмір: Kb PDF Сторінки: Page

  Купувати BCR30AM8

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Пов'язані сторона не має

• BCR30 MITSUBISHI[Mitsubishi Electric Semiconductor]
  MEDIUM POWER INSULATED TYPE, GLASS PASSIVATION TYPE
• BCR300B12
  TRIAC|600V V(DRM)|300A I(T)RMS|STF-M23
• BCR300B16
  TRIAC|800V V(DRM)|300A I(T)RMS|STF-M23
• BCR300B20
  TRIAC|1KV V(DRM)|300A I(T)RMS|STF-M23
• BCR300B24
  TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23
• BCR300B4
  TRIAC|200V V(DRM)|300A I(T)RMS|STF-M23
• BCR300B8
  TRIAC|400V V(DRM)|300A I(T)RMS|STF-M23
• BCR30AM Mitsubishi Electric Semiconductor
  MEDIUM POWER NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
• BCR30AM-12 Powerex Power Semiconductors
  Triac Ampere/400-600 Volts
• BCR30AM-12L Powerex Power Semiconductors
  Triac Ampere/400-600 Volts
• BCR30AM-12LA Renesas Technology Corp
  Triac Medium Power
• BCR30AM-12LA-A8 Renesas
  Triac Medium Power
• BCR30AM-12LB Renesas
  Triac Medium Power product guaranteed maximum junction temperature 150??C)
• BCR30AM-12LB-A8 Renesas
  Triac Medium Power product guaranteed maximum junction temperature 150??C)
• BCR30AM-8 Powerex Power Semiconductors
  Triac Ampere/400-600 Volts

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