Специфікацію PDF для KM416C1204CJ-45 результати пошуку
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Частина Ні: KM416C1204CJ-45
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SamsungТемпература:
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1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16msPDF Розмір: Kb PDF Сторінки: Page
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KM416C1204CJ-45 PDF
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- KM416C1204BJ-45 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1204BJ-5 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1204BJ-6 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1204BJ-7 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1204BJ-L45 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1204BJ-L5 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1204BJ-L6 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1204BJ-L7 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1204BT-45 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1204BT-5 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1204BT-6 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1204BT-7 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1204BT-L45 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1204BT-L5 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1204BT-L6 Samsung
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
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