Специфікацію PDF для KM416V1204CT-45 результати пошуку

• Частина Ні: KM416V1204CT-45

  Виробник:
  Samsung

  Температура:
  

  Опис:
  1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms

  PDF Розмір: Kb PDF Сторінки: Page

  Купувати KM416V1204CT-45

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• KM416V1204BJ Samsung semiconductor
  16BIT CMOS DYNAMIT WITH EXTENDED DATA
• KM416V1204BJ-5 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
• KM416V1204BJ-6 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
• KM416V1204BJ-7 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
• KM416V1204BJ-L5 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
• KM416V1204BJ-L6 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
• KM416V1204BJ-L7 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
• KM416V1204BT-5 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
• KM416V1204BT-6 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
• KM416V1204BT-7 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
• KM416V1204BT-L5 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
• KM416V1204BT-L6 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
• KM416V1204BT-L7 Samsung
  3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
• KM416V1204C
  16Bit CMOS Dynamic with Extended Data
• KM416V1204C-45 SAMSUNG[Samsung semiconductor]
  16Bit CMOS Dynamic with Extended Data

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