Datasheet PDF ل=== K4E160412D-F نتائج البحث
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الجزء رقم : K4E160412D-F
الصانع :
Samsungدرجة الحراره :
الوصف :
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.PDF الحجم : Kb PDF صفحات : Page
DatasheetPDF العثور على وثائق PDF 1 مطابقه الاستفسار :
Datasheet تحميل :
K4E160412D-F PDF
ذات الصلة جزءا لا
- K4E160411D Samsung semiconductor
4Bit CMOS Dynamic with Extended Data - K4E160411D-B Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160411D-F Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160412D Samsung semiconductor
4Bit CMOS Dynamic with Extended Data - K4E160412D-B Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. - K4E160412D-F Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
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