Datasheet PDF para K4E160412D-F Os resultados da pesquisa

• Parte n º: K4E160412D-F

  Fabricante:
  Samsung

  Temperatura:
  

  Descrição:
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

  PDF Tamanho: Kb PDF Páginas: Page

  Comprar K4E160412D-F

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• K4E160412D Samsung semiconductor
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• K4E160412D-B Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
• K4E160412D-F Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

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