Datasheet PDF За K4E160411D-B резултатите от търсенето

• Част No: K4E160411D-B

  Производител:
  Samsung

  Температура:
  

  Описание:
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.

  PDF Размер: Kb PDF Страници: Page

  Купувам K4E160411D-B

DatasheetPDF намерени 1 PDF документи, съответстващи на вашето запитване:

Datasheet Изтегли:
K4E160411D-B PDF

Свързани част не

• K4E160411D Samsung semiconductor
  4Bit CMOS Dynamic with Extended Data
• K4E160411D-B Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160411D-F Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160412D Samsung semiconductor
  4Bit CMOS Dynamic with Extended Data
• K4E160412D-B Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
• K4E160412D-F Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

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