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• Część nr: K4E160411D-B

  Producent:
  Samsung

  Temperatura:
  

  Opis:
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.

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Powiązane Część nr

• K4E160411D Samsung semiconductor
  4Bit CMOS Dynamic with Extended Data
• K4E160411D-B Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160411D-F Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• K4E160412D Samsung semiconductor
  4Bit CMOS Dynamic with Extended Data
• K4E160412D-B Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
• K4E160412D-F Samsung
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

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