Datasheet PDF За K4R441869AM-CG6 резултатите от търсенето

• Част No: K4R441869AM-CG6

  Производител:
  Samsung

  Температура:
  

  Описание:
  256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.

  PDF Размер: Kb PDF Страници: Page

  Купувам K4R441869AM-CG6

DatasheetPDF намерени 1 PDF документи, съответстващи на вашето запитване:

Datasheet Изтегли:
K4R441869AM-CG6 PDF

Свързани част не

• K4R441869A SAMSUNG[Samsung semiconductor]
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869A-N(M)CG6 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R441869A-N(M)CK7 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R441869A-N(M)CK8 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R441869A-NMCG6 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869A-NMCK7 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869A-NMCK8 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869AM-CG6 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.
• K4R441869AM-CK7 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz.
• K4R441869AM-CK8 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz.
• K4R441869AN-CG6 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.
• K4R441869AN-CK7 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz.
• K4R441869AN-CK8 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz.

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