Datu lapā PDF Par K4R441869AM-CG6 meklēšanas rezultāti

• Daļa Nr: K4R441869AM-CG6

  Ražotājs:
  Samsung

  Temperatūra:
  

  Apraksts
  256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.

  PDF izmērs: Kb PDF lapas: Page

  Pirkt K4R441869AM-CG6

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Saistītās puses nav

• K4R441869A SAMSUNG[Samsung semiconductor]
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869A-N(M)CG6 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R441869A-N(M)CK7 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R441869A-N(M)CK8 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R441869A-NMCG6 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869A-NMCK7 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869A-NMCK8 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R441869AM-CG6 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.
• K4R441869AM-CK7 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz.
• K4R441869AM-CK8 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz.
• K4R441869AN-CG6 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.
• K4R441869AN-CK7 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz.
• K4R441869AN-CK8 Samsung
  256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz.

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