电子元器件 QM200DY2H PDF资料
-
型号: QM200DY2H
生产厂家:
耐温:
功能描述:
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)PDF文件大小: Kb PDF页数: Page
具体资料功能参数数据:
其它相似电子元器件型号资料
- QM200DY-24 Mitsubishi Electric Semiconductor
HIGH POWER SWITCHING INSULATED TYPE - QM200DY-24B Mitsubishi Electric Semiconductor
HIGH POWER SWITCHING INSULATED TYPE - QM200DY-2H Mitsubishi Electric Semiconductor
HIGH POWER SWITCHING INSULATED TYPE - QM200DY-2HB Mitsubishi Electric Semiconductor
HIGH POWER SWITCHING INSULATED TYPE - QM200DY-HB
HIGH POWER SWITCHING INSULATED TYPE - QM200DY-HBK Mitsubishi
100A - transistor module for medium power switching use, insulated type - QM200DY-HK Mitsubishi
100A - transistor module for medium power switching use, insulated type - QM200DY24
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) - QM200DY24B
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) - QM200DY2H
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) - QM200DY2HB
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam