PDF-Datenblatt für QM200DY2H Suchergebnisse
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Art-Nr: QM200DY2H
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TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)PDF Größe: Kb PDF-Seiten: Page
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Verwandte Bestell-Nr
- QM200DY-24 Mitsubishi Electric Semiconductor
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HIGH POWER SWITCHING INSULATED TYPE - QM200DY-2H Mitsubishi Electric Semiconductor
HIGH POWER SWITCHING INSULATED TYPE - QM200DY-2HB Mitsubishi Electric Semiconductor
HIGH POWER SWITCHING INSULATED TYPE - QM200DY-HB
HIGH POWER SWITCHING INSULATED TYPE - QM200DY-HBK Mitsubishi
100A - transistor module for medium power switching use, insulated type - QM200DY-HK Mitsubishi
100A - transistor module for medium power switching use, insulated type - QM200DY24
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) - QM200DY24B
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) - QM200DY2H
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) - QM200DY2HB
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)
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