Date PDF pentru 2SC327907 rezultatele de căutare

• Partea nr: 2SC327907

  Producator:
  Toshiba Semiconductor

  Temperatura:
  

  Descriere:
  Silicon Epitaxial Type process) Strobe Flash Applications

  PDF Dimensiune: Kb PDF Pagini: Page

  Cumpăra 2SC327907

DatasheetPDF găsit 1 de potrivire documentele PDF interogare:

Date de descărcare:
2SC327907 PDF

Legate parte nu

• 2SC3270M Rohm
  High Voltage Amp.Triple Diffused Planar Silicon Transistors
• 2SC3271
  TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126ISO
• 2SC3271F ROHM
  Chroma Amplifier Transistor (300V, 0.1A)
• 2SC3271FM
  TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126
• 2SC3271FN
  TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126
• 2SC3271FP
  TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126
• 2SC3272
  TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR
• 2SC3277 Sanyo
  Triple Diffused Planar Silicon Transistor
• 2SC3277L
  TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-218VAR
• 2SC3277M
  TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-218VAR
• 2SC3277N
  TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-218VAR
• 2SC3279 Toshiba Semiconductor
  EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
• 2SC327907 Toshiba Semiconductor
  Silicon Epitaxial Type process) Strobe Flash Applications
• 2SC3279L
  TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92
• 2SC3279M
  BJT

English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian

Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam