PDF-Datenblatt für 2SC327907 Suchergebnisse
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Art-Nr: 2SC327907
Hersteller:
Toshiba SemiconductorTemperatur:
Beschreibung:
Silicon Epitaxial Type process) Strobe Flash ApplicationsPDF Größe: Kb PDF-Seiten: Page
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2SC327907 PDF
Verwandte Bestell-Nr
- 2SC3270M Rohm
High Voltage Amp.Triple Diffused Planar Silicon Transistors - 2SC3271
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126ISO - 2SC3271F ROHM
Chroma Amplifier Transistor (300V, 0.1A) - 2SC3271FM
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3271FN
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3271FP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3272
TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR - 2SC3277 Sanyo
Triple Diffused Planar Silicon Transistor - 2SC3277L
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-218VAR - 2SC3277M
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-218VAR - 2SC3277N
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-218VAR - 2SC3279 Toshiba Semiconductor
EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) - 2SC327907 Toshiba Semiconductor
Silicon Epitaxial Type process) Strobe Flash Applications - 2SC3279L
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 - 2SC3279M
BJT
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