Date PDF pentru IRG4BC10SD-STRR rezultatele de căutare
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Partea nr: IRG4BC10SD-STRR
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263ABPDF Dimensiune: Kb PDF Pagini: Page
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- IRG4BC10SD International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4BC10SD-L International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) - IRG4BC10SD-LPBF International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4BC10SD-S International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) - IRG4BC10SD-SPBF International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4BC10SD-STRL
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB - IRG4BC10SD-STRR
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB - IRG4BC10SDPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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