Datablad PDF for IRG4BC10SD-STRR søgeresultaterne

• Del nr.: IRG4BC10SD-STRR

  Producent:
  

  Temperatur:
  

  Beskrivelse:
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB

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  Købe IRG4BC10SD-STRR

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Relaterede del nr.

• IRG4BC10SD International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
• IRG4BC10SD-L International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
• IRG4BC10SD-LPBF International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
• IRG4BC10SD-S International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
• IRG4BC10SD-SPBF International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
• IRG4BC10SD-STRL
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
• IRG4BC10SD-STRR
  TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
• IRG4BC10SDPBF
  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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