Date PDF pentru K4R271669AM-CG6 rezultatele de căutare

• Partea nr: K4R271669AM-CG6

  Producator:
  Samsung

  Temperatura:
  

  Descriere:
  256K x 16 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.

  PDF Dimensiune: Kb PDF Pagini: Page

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• K4R271669A SAMSUNG[Samsung semiconductor]
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R271669A-N(M)CK7 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R271669A-N(M)CK8 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R271669A-NB(M)CCG6 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R271669A-NBMCCG6 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R271669A-NMCK7 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R271669A-NMCK8 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R271669AM-CG6 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.
• K4R271669AM-CK7 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz.
• K4R271669AM-CK8 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz.
• K4R271669AN-CG6 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq 600 MHz.
• K4R271669AN-CK7 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz.
• K4R271669AN-CK8 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz.

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