Δελτίο pdf για K4R271669AM-CG6 τα αποτελέσματα αναζήτησης

• Δεν Μέρος: K4R271669AM-CG6

  Παραγωγός:
  Samsung

  Θερμοκρασία:
  

  Περιγραφη:
  256K x 16 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.

  PDF Μέγεθος: Kb PDF Σελίδες: Page

  Αγοράζω K4R271669AM-CG6

DatasheetPDF βρέθηκε 1 PDF έγγραφα ταιριάζουν με το ερώτημά σας:

Κατεβάστε το δελτίο:
K4R271669AM-CG6 PDF

Σχετικές μέρος δεν

• K4R271669A SAMSUNG[Samsung semiconductor]
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R271669A-N(M)CK7 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R271669A-N(M)CK8 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R271669A-NB(M)CCG6 Samsung semiconductor
  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
• K4R271669A-NBMCCG6 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R271669A-NMCK7 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R271669A-NMCK8 Samsung semiconductor
  256K 16/18 Dependent Banks Direct RDRAMTM
• K4R271669AM-CG6 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz.
• K4R271669AM-CK7 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz.
• K4R271669AM-CK8 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz.
• K4R271669AN-CG6 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq 600 MHz.
• K4R271669AN-CK7 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz.
• K4R271669AN-CK8 Samsung
  256K x 16 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz.

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