Datablad PDF for K4R441869B søgeresultaterne
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Del nr.: K4R441869B
Producent:
Samsung semiconductorTemperatur:
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256K x 16/18 bit x 32s banks Direct RDRAMTMPDF Størrelse: Kb PDF Sider: Page
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256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz. - K4R441869AN-CG6 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz. - K4R441869AN-CK7 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz. - K4R441869AN-CK8 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz. - K4R441869B Samsung semiconductor
256K x 16/18 bit x 32s banks Direct RDRAMTM - K4R441869B-MCG6 SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM
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