Datasheet PDF За K4R441869B резултатите от търсенето
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Част No: K4R441869B
Производител:
Samsung semiconductorТемпература:
Описание:
256K x 16/18 bit x 32s banks Direct RDRAMTMPDF Размер: Kb PDF Страници: Page
DatasheetPDF намерени 1 PDF документи, съответстващи на вашето запитване:
Свързани част не
- K4R441869A SAMSUNG[Samsung semiconductor]
256K 16/18 Dependent Banks Direct RDRAMTM - K4R441869A-N(M)CG6 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R441869A-N(M)CK7 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R441869A-N(M)CK8 Samsung semiconductor
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM - K4R441869A-NMCG6 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R441869A-NMCK7 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R441869A-NMCK8 Samsung semiconductor
256K 16/18 Dependent Banks Direct RDRAMTM - K4R441869AM-CG6 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz. - K4R441869AM-CK7 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz. - K4R441869AM-CK8 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz. - K4R441869AN-CG6 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 53.3 ns, I/O freq. 600 MHz. - K4R441869AN-CK7 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 711 MHz. - K4R441869AN-CK8 Samsung
256K x 18 x 32s dependent banks direct RDRAM. Access time 45 ns, I/O freq. 800 MHz. - K4R441869B Samsung semiconductor
256K x 16/18 bit x 32s banks Direct RDRAMTM - K4R441869B-MCG6 SAMSUNG[Samsung semiconductor]
256K 16/18 banks Direct RDRAMTM
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