Tuotetiedot PDF- IRG4PH30KD Hakutulokset
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International RectifierLämpötila:
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)Pdf koko: Kb PDF-sivut: Page
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IRG4PH30KD PDF
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- IRG4PH30 IRF[International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) - IRG4PH30K International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) - IRG4PH30KD International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) - IRG4PH30KDPBF International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4PH30KPBF International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT
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