Datu lapā PDF Par IRG4PH30KD meklēšanas rezultāti
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Daļa Nr: IRG4PH30KD
Ražotājs:
International RectifierTemperatūra:
Apraksts
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)PDF izmērs: Kb PDF lapas: Page
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IRG4PH30KD PDF
Saistītās puses nav
- IRG4PH30 IRF[International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) - IRG4PH30K International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) - IRG4PH30KD International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) - IRG4PH30KDPBF International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRG4PH30KPBF International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT
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