PDF-Datenblatt für  2SC1959_07  Suchergebnisse

• Art-Nr: 2SC1959_07

  Hersteller:
  Toshiba Semiconductor

  Temperatur:
  

  Beschreibung:
  Silicon Epitaxial Type process)

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen 2SC1959_07

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2SC1959_07 PDF

Verwandte Bestell-Nr

• 2SC1953 Panasonic Semiconductor
  
• 2SC1953Q
  TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126
• 2SC1953R
  TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126
• 2SC1953S
  TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126
• 2SC1953T
  TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126
• 2SC1955
  TRANSISTOR | BJT | NPN | 17V V(BR)CEO | 800MA I(C) | TO-39
• 2SC1959 Toshiba
  AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS
• 2SC195907 Toshiba Semiconductor
  Silicon Epitaxial Type process)
• 2SC1959GR
  TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-92
• 2SC1959O
  BJT
• 2SC1959Y
  TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | TO-92
• 2SC1959_07 Toshiba Semiconductor
  Silicon PNP Epitaxial Type (PCT process)

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