Datasheet PDF para 2SC1959_07 Os resultados da pesquisa

• Parte n º: 2SC1959_07

  Fabricante:
  Toshiba Semiconductor

  Temperatura:
  

  Descrição:
  Silicon Epitaxial Type process)

  PDF Tamanho: Kb PDF Páginas: Page

  Comprar 2SC1959_07

DatasheetPDF encontrados 1 documentos PDF que correspondem à sua consulta:

Datasheet Download:
2SC1959_07 PDF

Relacionados no lado

• 2SC1953 Panasonic Semiconductor
  
• 2SC1953Q
  TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126
• 2SC1953R
  TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126
• 2SC1953S
  TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126
• 2SC1953T
  TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126
• 2SC1955
  TRANSISTOR | BJT | NPN | 17V V(BR)CEO | 800MA I(C) | TO-39
• 2SC1959 Toshiba
  AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS
• 2SC195907 Toshiba Semiconductor
  Silicon Epitaxial Type process)
• 2SC1959GR
  TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-92
• 2SC1959O
  BJT
• 2SC1959Y
  TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | TO-92
• 2SC1959_07 Toshiba Semiconductor
  Silicon PNP Epitaxial Type (PCT process)

English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian

Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam