PDF-Datenblatt für BF410B Suchergebnisse
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Art-Nr: BF410B
Hersteller:
Philips SemiconductorsTemperatur:
Beschreibung:
N-channel silicon field-effect transistorsPDF Größe: Kb PDF-Seiten: Page
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BF410B PDF
Verwandte Bestell-Nr
- BF410 Siemens Semiconductor Group
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR APPLICATIONS - BF410A Philips Semiconductors
N-channel silicon field-effect transistors - BF410B Philips Semiconductors
N-channel silicon field-effect transistors - BF410C Philips Semiconductors
N-channel silicon field-effect transistors - BF410D Philips Semiconductors
N-channel silicon field-effect transistors - BF411
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 50MA I(C) | TO-92 - BF412
TRANSISTOR | BJT | NPN | 130V V(BR)CEO | 50MA I(C) | TO-92 - BF413
TRANSISTOR | BJT | NPN | 170V V(BR)CEO | 50MA I(C) | TO-92 - BF414 Siemens Semiconductor Group
Silicon Transistor low-noise, common base stages) - BF419 PHILIPS[Philips Semiconductors]
high-voltage transistor - BF41931 ETC[ETC]
SINGLE PHASE MOULDED BRIDGES
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