PDF-Datenblatt für  BF410D  Suchergebnisse

• Art-Nr: BF410D

  Hersteller:
  Philips Semiconductors

  Temperatur:
  

  Beschreibung:
  N-channel silicon field-effect transistors

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen BF410D

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BF410D PDF

Verwandte Bestell-Nr

• BF410 Siemens Semiconductor Group
  LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR APPLICATIONS
• BF410A Philips Semiconductors
  N-channel silicon field-effect transistors
• BF410B Philips Semiconductors
  N-channel silicon field-effect transistors
• BF410C Philips Semiconductors
  N-channel silicon field-effect transistors
• BF410D Philips Semiconductors
  N-channel silicon field-effect transistors
• BF411
  TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 50MA I(C) | TO-92
• BF412
  TRANSISTOR | BJT | NPN | 130V V(BR)CEO | 50MA I(C) | TO-92
• BF413
  TRANSISTOR | BJT | NPN | 170V V(BR)CEO | 50MA I(C) | TO-92
• BF414 Siemens Semiconductor Group
  Silicon Transistor low-noise, common base stages)
• BF419 PHILIPS[Philips Semiconductors]
  high-voltage transistor
• BF41931 ETC[ETC]
  SINGLE PHASE MOULDED BRIDGES

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