PDF-Datenblatt für  QM200DY-HK  Suchergebnisse

• Art-Nr: QM200DY-HK

  Hersteller:
  Mitsubishi

  Temperatur:
  

  Beschreibung:
  100A - transistor module for medium power switching use, insulated type

  PDF Größe: Kb PDF-Seiten: Page

  Kaufen QM200DY-HK

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QM200DY-HK PDF

Verwandte Bestell-Nr

• QM200DY-24 Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM200DY-24B Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM200DY-2H Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM200DY-2HB Mitsubishi Electric Semiconductor
  HIGH POWER SWITCHING INSULATED TYPE
• QM200DY-HB
  HIGH POWER SWITCHING INSULATED TYPE
• QM200DY-HBK Mitsubishi
  100A - transistor module for medium power switching use, insulated type
• QM200DY-HK Mitsubishi
  100A - transistor module for medium power switching use, insulated type
• QM200DY24
  TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C)
• QM200DY24B
  TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C)
• QM200DY2H
  TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)
• QM200DY2HB
  TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C)

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