נתונים עבור PDF 2SB106706 תוצאות חיפוש
-
חלק לא: 2SB106706
יצרן:
Toshibaטמפרטורה:
תיאור:
Silicon Epitaxial Type (Darlington Power Transistor)PDF גודל: Kb PDF דפים: Page
DatasheetPDF PDF נמצאו 1 מסמכים מתאימים את השאילתה:
נתונים הורד:
2SB106706 PDF
חלק לא קשורים
- 2SB1061 Hitachi Semiconductor
Silicon Triple Diffused Frequency Power Amplifier - 2SB1062
Epitaxial Plannar - 2SB1063 Matsshita Panasonic
Power Transistors - 2SB1063P
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | SOT-186 - 2SB1063Q
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | SOT-186 - 2SB1063R
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | SOT-186 - 2SB1064 Inchange
Silicon Power Transistors - 2SB1065 Inchange
Silicon Power Transistors - 2SB1066M Rohm
Epitaxial Planar Silicon Transistors - 2SB1067 Toshiba Semiconductor
TRANSISTOR (MICRO NOTER DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS) - 2SB106706 Toshiba
Silicon Epitaxial Type (Darlington Power Transistor) - 2SB1067_06 Toshiba Semiconductor
Silicon PNP Epitaxial Type (Darlington Power Transistor) - 2SB1068
SILICON TRANSISTOR - 2SB1068K NEC
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 2A I(C) | TO-92 - 2SB1068L NEC
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 2A I(C) | TO-92
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam