נתונים עבור PDF K4E170812D-B תוצאות חיפוש
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חלק לא: K4E170812D-B
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Samsungטמפרטורה:
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2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.PDF גודל: Kb PDF דפים: Page
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K4E170812D-B PDF
חלק לא קשורים
- K4E170811D Samsung semiconductor
8Bit CMOS Dynamic with Extended Data - K4E170811D-B Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E170811D-F Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. - K4E170812D Samsung semiconductor
8Bit CMOS Dynamic with Extended Data - K4E170812D-B Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. - K4E170812D-F Samsung
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
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