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N. parte: BF961A
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Vishay SiliconixTemperatura:
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N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion ModePDF Dimensioni: Kb PDF Pagine: Page
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BF961A PDF
Parte n. connessi
- BF960 Vishay Telefunken
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE - BF961 Vishay
N??“Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode - BF961A Vishay Siliconix
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF961B Vishay Siliconix
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF963
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-103 - BF964 Vishay Siliconix
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF964S Vishay Siliconix
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF964SA
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF964SB
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF965
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103 - BF966
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103 - BF966S Vishay Telefunken
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF966SA
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF966SB
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF967 Siemens Semiconductor Group
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