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• N. parte: GT10J32106

  Produttore:
  Toshiba Semiconductor

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  Descrizione:
  Silicon Channel IGBT High Power Switching Applications

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Parte n. connessi

• GT10J321 Toshiba Semiconductor
  TOSHIBA Insulated Gate Bipolar Transistor Silicon Chanenel IGBT
• GT10J32106 Toshiba Semiconductor
  Silicon Channel IGBT High Power Switching Applications
• GT10J321_06 Toshiba Semiconductor
  Silicon N Channel IGBT High Power Switching Applications

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