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• N. parte: K4E660812E-JCL

  Produttore:
  SAMSUNG[Samsung semiconductor]

  Temperatura:
  

  Descrizione:
  8bit CMOS Dynamic with Extended Data

  PDF Dimensioni: Kb PDF Pagine: Page

  Comprare K4E660812E-JCL

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Parte n. connessi

• K4E660812B Samsung semiconductor
  8bit CMOS Dynamic with Extended Data
• K4E660812B-JC-45 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 45ns
• K4E660812B-JC-5 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 50ns
• K4E660812B-JC-6 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 60ns
• K4E660812B-JCL-5 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 50ns
• K4E660812B-JCL-6 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 60ns
• K4E660812B-TC-45 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 45ns
• K4E660812B-TC-5 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 50ns
• K4E660812B-TC-6 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 60ns
• K4E660812B-TCL-45 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 45ns
• K4E660812B-TCL-5 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 50ns
• K4E660812B-TCL-6 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 60ns
• K4E660812C Samsung semiconductor
  8bit CMOS Dynamic with Extended Data
• K4E660812C-JC-5 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 50ns
• K4E660812C-JC-6 Samsung
  8M x 8bit CMOS dynamic RAM with extended data out, 60ns

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