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Partea nr: K4E660812E-JCL
Producator:
SAMSUNG[Samsung semiconductor]Temperatura:
Descriere:
8bit CMOS Dynamic with Extended DataPDF Dimensiune: Kb PDF Pagini: Page
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K4E660812E-JCL PDF
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- K4E660812B Samsung semiconductor
8bit CMOS Dynamic with Extended Data - K4E660812B-JC-45 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 45ns - K4E660812B-JC-5 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - K4E660812B-JC-6 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - K4E660812B-JCL-5 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - K4E660812B-JCL-6 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - K4E660812B-TC-45 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 45ns - K4E660812B-TC-5 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - K4E660812B-TC-6 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - K4E660812B-TCL-45 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 45ns - K4E660812B-TCL-5 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - K4E660812B-TCL-6 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - K4E660812C Samsung semiconductor
8bit CMOS Dynamic with Extended Data - K4E660812C-JC-5 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - K4E660812C-JC-6 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
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