データシートPDFを K4E160412D-B 検索結果
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部品番号: K4E160412D-B
製造元:
Samsung温度:
説明:
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.PDFサイズ: Kb PDFページ: Page
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データシートのダウンロード:
K4E160412D-B PDF
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4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160412D Samsung semiconductor
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4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
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