データシートPDFを K4E160412D 検索結果
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部品番号: K4E160412D
製造元:
Samsung semiconductor温度:
説明:
4Bit CMOS Dynamic with Extended DataPDFサイズ: Kb PDFページ: Page
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K4E160412D PDF
関連した部分の
- K4E160411D Samsung semiconductor
4Bit CMOS Dynamic with Extended Data - K4E160411D-B Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160411D-F Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - K4E160412D Samsung semiconductor
4Bit CMOS Dynamic with Extended Data - K4E160412D-B Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. - K4E160412D-F Samsung
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
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