데이터 시트 PDF에 대한 2SC3600E 검색 결과를
-
부품 번호 : 2SC3600E
제조 업체 :
온도 :
설명 :
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126PDF 크기 : Kb PDF 페이지 : Page
DatasheetPDF 찾은 한 문서와 일치하는 검색어 :
관련 일부 지역
- 2SC3600 Sanyo Semicon Device
high-Definition Display Video Output Applications - 2SC3600C
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600D
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600E
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600F
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3601 Sanyo
PNP/NPN Epitaxial Planar Silicon Transistors - 2SC3601C
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601D
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601E
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601F
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3602
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | MICRO-X - 2SC3603 NEC[NEC]
EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION - 2SC3604 NEC[NEC]
EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION - 2SC3605 Toshiba
VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS - 2SC3606
EPITAXIAL PLANAR TYPE (VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS)
English Chinese Spanish Arabic Portuguese Russian Japanese German Korean French Italian
Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam