데이터 시트 PDF에 대한 2SC3600D 검색 결과를
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부품 번호 : 2SC3600D
제조 업체 :
온도 :
설명 :
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126PDF 크기 : Kb PDF 페이지 : Page
DatasheetPDF 찾은 한 문서와 일치하는 검색어 :
관련 일부 지역
- 2SC3600 Sanyo Semicon Device
high-Definition Display Video Output Applications - 2SC3600C
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600D
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600E
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3600F
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SC3601 Sanyo
PNP/NPN Epitaxial Planar Silicon Transistors - 2SC3601C
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601D
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601E
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3601F
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 150MA I(C) | TO-126 - 2SC3602
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | MICRO-X - 2SC3603 NEC[NEC]
EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION - 2SC3604 NEC[NEC]
EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION - 2SC3605 Toshiba
VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS - 2SC3606
EPITAXIAL PLANAR TYPE (VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS)
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