Datu lapā PDF Par 2SB149506 meklēšanas rezultāti

• Daļa Nr: 2SB149506

  Ražotājs:
  Toshiba Semiconductor

  Temperatūra:
  

  Apraksts
  Silicon Epitaxial Type

  PDF izmērs: Kb PDF lapas: Page

  Pirkt 2SB149506

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2SB149506 PDF

Saistītās puses nav

• 2SB1490 Matsshita Panasonic
  Power Transistors
• 2SB1490P
  TRANSISTOR | BJT | DARLINGTON | PNP | 140V V(BR)CEO | 7A I(C) | TO-247VAR
• 2SB1490Q
  TRANSISTOR | BJT | DARLINGTON | PNP | 140V V(BR)CEO | 7A I(C) | TO-247VAR
• 2SB1492 Panasonic Semiconductor
  Silicon epitaxial planar type Darlington(For power amplification)
• 2SB1493 Panasonic Semiconductor
  power amplification Complementary 2SD2255
• 2SB1494 Hitachi Semiconductor
  Silicon Triple Diffused
• 2SB1495 Toshiba
  HIGH POWER SWITCHING APPLICATIONS
• 2SB149506 Toshiba Semiconductor
  Silicon Epitaxial Type
• 2SB1495_06 Toshiba Semiconductor
  Silicon PNP Epitaxial Type
• 2SB1496 ROHM
  TAPED POWER TRANSISTOR PACKAGE WITH AUTOMATIC PLACEMENT MACHINE
• 2SB1496D
  TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-225VAR
• 2SB1496E
  TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-225VAR
• 2SB1496F
  TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-225VAR
• 2SB1498
  
• 2SB1499
  

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