PDF už 2SB149506 paieškos rezultatai
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Dalis Nr: 2SB149506
Gamintojas:
Toshiba SemiconductorTemperatūra:
Aprašymas:
Silicon Epitaxial TypePDF Dydis: Kb PDF Puslapiai: Page
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2SB149506 PDF
Susijusios dalis jokiu
- 2SB1490 Matsshita Panasonic
Power Transistors - 2SB1490P
TRANSISTOR | BJT | DARLINGTON | PNP | 140V V(BR)CEO | 7A I(C) | TO-247VAR - 2SB1490Q
TRANSISTOR | BJT | DARLINGTON | PNP | 140V V(BR)CEO | 7A I(C) | TO-247VAR - 2SB1492 Panasonic Semiconductor
Silicon epitaxial planar type Darlington(For power amplification) - 2SB1493 Panasonic Semiconductor
power amplification Complementary 2SD2255 - 2SB1494 Hitachi Semiconductor
Silicon Triple Diffused - 2SB1495 Toshiba
HIGH POWER SWITCHING APPLICATIONS - 2SB149506 Toshiba Semiconductor
Silicon Epitaxial Type - 2SB1495_06 Toshiba Semiconductor
Silicon PNP Epitaxial Type - 2SB1496 ROHM
TAPED POWER TRANSISTOR PACKAGE WITH AUTOMATIC PLACEMENT MACHINE - 2SB1496D
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-225VAR - 2SB1496E
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-225VAR - 2SB1496F
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-225VAR - 2SB1498
- 2SB1499
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