Datu lapā PDF Par 2SC238306 meklēšanas rezultāti
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Daļa Nr: 2SC238306
Ražotājs:
Toshiba SemiconductorTemperatūra:
Apraksts
Silicon Epitaxial Type Process)PDF izmērs: Kb PDF lapas: Page
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2SC238306 PDF
Saistītās puses nav
- 2SC2380 TOSHIBA
Silicon Epitaxial Planar Type - 2SC2381
TRANSISTOR | BJT | NPN | 6A I(C) | SOT-123VAR - 2SC2383 Toshiba Semiconductor
TRANSISTOR (COLOR VERT. DEFLECTION, CLASS SOUND OUTPUT APPLICATIONS) - 2SC238306 Toshiba Semiconductor
Silicon Epitaxial Type Process) - 2SC2383O
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1A I(C) | TO-92VAR - 2SC2383R
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1A I(C) | TO-92VAR - 2SC2383Y
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1A I(C) | TO-92VAR - 2SC2383_06 Toshiba Semiconductor
Silicon NPN Epitaxial Type (PCT Process) - 2SC2389
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 - 2SC2389S Toshiba Semiconductor
- 2SC2389SE
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SPAK - 2SC2389SR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SPAK - 2SC2389SS
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SPAK
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