Karta katalogowa PDF dla 2SC238306 wyników wyszukiwania
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Część nr: 2SC238306
Producent:
Toshiba SemiconductorTemperatura:
Opis:
Silicon Epitaxial Type Process)PDF Rozmiar: Kb PDF Strony: Page
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2SC238306 PDF
Powiązane Część nr
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TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SPAK - 2SC2389SR
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